基本释义:

霍尔子群

网络释义

1)Hall subgroup,霍尔子群

2)hall ion source,霍尔离子源

3)end-Hall ion source,端部霍尔离子源

4)end Hall ion source,端部霍尔离子源

5)Quantum Hall resistance,量子化霍尔电阻

6)gridless hall ion source,无栅霍尔离子源

用法和例句

The Ti and N doped diamond-like carbon films with transition layer of Cr are fabricated in Combine unbalanced magnetron sputtering with cathode arc, and use Hall ion source assisted to prepare.

应用电弧离子镀和非平衡磁控溅射镀膜技术相结合的方法,并使用霍尔离子源辅助,制备了过渡层为Cr、掺杂Ti和N的DLC薄膜。

The hard black films has been prepared by combining unbalanced magnetron sputtering with middle frequency twin targets magnetron sputtering, cathode arc and Hall ion source.

将中频孪生靶磁控溅射、非平衡磁控溅射、电弧离子镀和霍尔离子源辅助沉积四种技术结合起来开发了复合镀膜工艺,制备了黑色硬质膜。

Design and numerical simulation of magnetic field for end-Hall ion source;

端部霍尔离子源的磁场设计与数值模拟

Comparative analysis of two patterns of end-Hall ion sources for ion beam-assisted deposition;

用于离子束辅助镀膜的两种模式端部霍尔离子源的比较

The characteristic of end-hall ion source was studied in this paper.

本文通过对端部霍尔离子源特性的研究 ,采用自行研制的用于离子束辅助沉积的端部霍尔离子源成功镀制了类金刚石膜 ,并对采用该离子源制备类金刚石膜的工艺进行了研究和分析。

Under the conditions of ion beam-assisted deposition (IBAD) using broad beam cold cathode and end Hall ion sources, utilizing the box type of Nanguang ZZS700-1/G coater,the influences of two IBADs on transmissivity and stress have been demonstrated respectively.

　在宽束冷阴极离子源和端部霍尔离子源辅助沉积情况下,利用南光ZZS700-1/G箱式镀膜机,通过实验分别验证了这两种离子束辅助沉积对光学膜层透过率和应力的影响。

The quantum hall resistance standard in NIM;

中国计量科学研究院建成量子化霍尔电阻标准