基本释义:

晶圆後端测试

网络释义

1)final wafer test,晶圆後端测试

2)Wafersort,晶圆测试

3)final test,最後测试

4)Wafer test,圆晶片测试

5)wafer probing,晶圆测试，晶圆探测

6)Wafer Probe,晶圆测试探针

用法和例句

Wafer Probe Acquires a New Importance in Testing;

晶圆测试探针新的测试价值

The RF Wafer Test Technology with SoC Tester

基于SoC测试系统的RF圆晶片测试技术

Mechanical Test Wafer- A silicon wafer used for testing purposes.

机械测试晶圆片-用于测试的晶圆片。

Process Test Wafer- A wafer that can be used for processes as well as area cleanliness.

加工测试晶圆片-用于区域清洁过程中的晶圆片。

Virgin Test Wafer- A wafer that has not been used in manufacturing or other processes.

原始测试晶圆片-还没有用于生产或其他流程中的晶圆片。

Particle Counting- Wafers that are used to test tools for particle contamination.

颗粒计算-用来测试晶圆片颗粒污染的测试工具。

Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring.

测试晶圆片-影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。

Premium Wafer- A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring.

测试晶圆片-影印过程中用于颗粒计算、量溶解度和检测金属污染的晶圆片。

Profilometer - A tool that is used for measuring surface topography.

表面形貌剂-一种用来测量晶圆片表面形貌的工具。

Ingot- A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.

晶锭-由多晶或单晶形成的圆柱体，晶圆片由此切割而成。

Design of the transistor characteristic test system based on 51 MCU

基于51单片机的晶体管特性测试系统的设计

Bonded Wafers- Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.

绑定晶圆片-两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。

Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.

雾度-晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。

Notch- An indent on the edge of a wafer used for orientation purposes.

凹槽-晶圆片边缘上用于晶向定位的小凹槽。

Bonding Interface- The area where the bonding of two wafers occurs.

绑定面-两个晶圆片结合的接触区。

Primary Orientation Flat- The longest flat found on the wafer.

主定位边-晶圆片上最长的定位边。

Slip- A defect pattern of small ridges found on the surface of the wafer.

划伤-晶圆片表面上的小皱造成的缺陷。

Mound- A raised defect on the surface of a wafer measuring more than0.25 mm.

堆垛-晶圆片表面超过0.25毫米的缺陷。

Pit- A non-removable imperfection found on the surface of a wafer.

深坑-一种晶圆片表面无法消除的缺陷。