基本释义:

磊晶晶圆

网络释义

1)epitaxial wafer,磊晶晶圆

2)epitaxial growth system,磊晶生长系统

3)wafer,晶圆

4)atomic layer epitaxial growth system,原子层磊晶生长系统

5)low presure vapor phase epitaxial growth system,低压汽相磊晶生长系统

6)molecular beam epitaxial growth system,分子束磊晶生长系统

用法和例句

Evolution of Wafer-Surface Preparation for Semiconductor Industry;

半导体产业中晶圆片表面处理的发展

Critical Success Factors for High-Volume Wafer-level Solder Ball Placement

大规模晶圆级焊球置放关键的成功因素

The structural design of the wafer expansion device was put forward.

该装置可完成片盒、内圈和外圈的输入和取片动作,实现扩晶过程张紧力的调节控制、分离晶圆和衬架、排出空片盒和废弃的衬架等。

Mechanical Test Wafer- A silicon wafer used for testing purposes.

机械测试晶圆片-用于测试的晶圆片。

Ingot- A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.

晶锭-由多晶或单晶形成的圆柱体，晶圆片由此切割而成。

Process Test Wafer- A wafer that can be used for processes as well as area cleanliness.

加工测试晶圆片-用于区域清洁过程中的晶圆片。

tours Powerchip Semiconductor Corporation's twelve-inch wafer plant in ....County.

赴…县参观力晶半导体十二吋晶圆厂

Virgin Test Wafer- A wafer that has not been used in manufacturing or other processes.

原始测试晶圆片-还没有用于生产或其他流程中的晶圆片。

Flat- A section of the perimeter of a wafer that has been removed for wafer orientation purposes.

平边-晶圆片圆周上的一个小平面，作为晶向定位的依据。

Bonded Wafers- Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.

绑定晶圆片-两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。

Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.

雾度-晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。

Notch- An indent on the edge of a wafer used for orientation purposes.

凹槽-晶圆片边缘上用于晶向定位的小凹槽。

Bonding Interface- The area where the bonding of two wafers occurs.

绑定面-两个晶圆片结合的接触区。

Primary Orientation Flat- The longest flat found on the wafer.

主定位边-晶圆片上最长的定位边。

Hot plate with silicon wafer lowered to heating position.

加热板与矽晶圆降低至加热位置。

Slip- A defect pattern of small ridges found on the surface of the wafer.

划伤-晶圆片表面上的小皱造成的缺陷。

Mound- A raised defect on the surface of a wafer measuring more than0.25 mm.

堆垛-晶圆片表面超过0.25毫米的缺陷。

Pit- A non-removable imperfection found on the surface of a wafer.

深坑-一种晶圆片表面无法消除的缺陷。

Waviness- Widely spaced imperfections on the surface of a wafer.

波纹-晶圆片表面经常出现的缺陷。

Hot plate with silicon wafer in initial configuration (before heating).

加热板与矽晶圆在启始状态（加热前）。

Smudge- A defect or contamination found on the wafer caused by fingerprints.

污迹-晶圆片上指纹造成的缺陷或污染。