基本释义:

双面抛光机

网络释义

1)Double sided polishing machine,双面抛光机

2)double-faced,双面

3)double-side grinding,双面磨削

4)double-faced jacquard,双面提花

5)double-sided polishing,双面抛光

6)double dewatering,双面脱水

用法和例句

The paper introduces producting technology of hot rolling high strength double-faced enamelled steel,study on mechanism how to realize properties of double-faced enamel and high yield strength.

本文介绍了鞍钢热轧高强双面搪瓷钢的生产工艺,并对实现良好的双面搪瓷性能和高屈服强度的机理进行了研究和分析。

Using double-side grinding technology in 300 mm Si wafer manufacturing process,the Si wafer can obtain high accuracy surface parameters,and generate obvious grinding marks,which can affect the surface flatness.

在直径300mm Si片制备过程中,利用双面磨削技术能获得高精度的表面参数,但同时却会在Si片表面留下明显的磨削印痕,这会影响Si片表面平整度。

Considering that the fabric of computerized knitting machine is characterized by double-faced jacquard at present,the program based on multi-views is set forth to raise designing efficiency.

在介绍单面提花织物和双面提花织物特点的基础上,针对目前电脑横机织物以双面提花为主的特点,以提高设计人员设计效率为目的,阐述了一种多文档视图电脑横机花型准备系统的设计思路。

Based on the analysis of the process of double-sided polishing,we establish a mathematical model when the double-sided polishing machine working in a calm movement state,simulate the process of double-sided polishing by programming language as changing the parameters.

分析了双面抛光机的加工过程,建立了抛光晶片在双面抛光机平稳运动状态下运动的数学模型,采用计算机对双面抛光加工进行运动仿真,并通过改变不同的参数值,得出抛光过程中不同参数对抛光效果的影响。

The wafer motion and the load in double-sided polishing process are main factors which affect the wafer surface quality.

晶片在双面抛光加工过程中具有多向运动、受力复杂、表面材料微细去除的特征,晶片的运动和受力是影响双面抛光加工质量的主要因素。

According to the characteristics of core,clad and solid rim glass material of microchannel plate(MCP),the mechanism of double-sided polishing of MCP was analyzed.

基于微通道板皮料、芯料、实体边玻璃材料的特点,分析了微通道板的双面抛光机理,研究了抛光工艺参数(抛光粉、抛光压力、抛光液pH值等)对MCP平面粗糙度、表面质量的影响,提出了微通道板的抛光工艺及参数:抛光粉应选择莫氏硬度为6、粒度为1。