基本释义:

全球排放量 GE

网络释义

1)global emissions,全球排放量 GE

2)Ge quantum dots,Ge量子点

3)Germanium,Ge

4)Ge/Si quantum-well,Ge/Si量子阱

5)Ge/Si quantum dots,Ge/Si量子点

6)SiGe quantum dots,Si Ge量子点

用法和例句

Thermal diffusion effect of self-assembled Ge quantum dots probed by fluorescence X-ray absorption fine structure;

自组装Ge量子点热扩散效应的XAFS研究

Self-organized growth of Ge quantum dots by UHV/CVD;

UHV/CVD自对准生长Ge量子点(英文)

High density of Ge quantum dots (QDs) with size of less than 10 nm were obtained on Si(001) surface by optimizing the growth parameters.

通过调节生长参数,在Si(001)衬底表面利用分子束外延(MBE)方法生长得到尺寸小于10nm的高密度Ge量子点。

The Determination of Germanium and Impurities in Organic Germanium (Ge-132) by AAS;

原子吸收光谱法测定有机锗（Ge─132）中的锗及其杂质

Scanning tunneling microscopy (STM) and x_ray photoemission spectroscopy (XPS) studies of germanium growth on Ru(0001) were carried out.

报道Ge在Ru(0 0 0 1)表面上生长以及相互作用行为的扫描隧道显微镜 (STM)和x射线光电子能谱 (XPS)研究 。

Two metal-germanium schottky junctions on and under the waveguide were fabricated to form metal-germanium-metal photodetector and the dark current density of 0.

以外延Ge薄膜为吸收区,在Si基上制备了Ge波导光电探测器。

A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/poly-Si floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing.

提出了一种用于半导体闪速存储器单元的新的Si/Si Ge量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制。

Si-base Ge Quantum-Dots Photodetector Used in Fiber Communication Field

基于Si衬底Ge量子点光纤通信用光电探测器研制

Investigation on the Stress and Strain Distribution of Ge/Si Semiconductor Self-Organized Quantum Dots;

Ge/Si半导体量子点应力应变分布研究

ANALYSIS OF STRUCTURAL DESIGN FEATURES OF GE COAL-WATER SLURRY GASIFIER

GE水煤浆气化炉的结构设计特点分析

Study of Nanocrystalline Ge Preparation and Neutron Transmutation Doping;

Ge纳米晶制备及中子嬗变掺杂的研究

Atomic Simulations on Thermal Conductivity of Several Si,Ge Nanowires

几种Si、Ge纳米线导热系数的原子模拟

Properties of Germanium Thin Film and Its Application in Photon Counting Imaging System

Ge薄膜特性及其在光子计数成像系统中的应用

First-principles Calculation of Electronic Structure and Optical Properties of Si∶Ge

利用第一性原理研究Ge∶Si电子结构与光学性质

Damage of electron irradiation to the GaInP/GaAs/Ge triple-junction solar cell

GaInP/GaAs/Ge三结太阳电池的电子辐照损伤效应

The Phonon Spectrum and Group Velocity of Si/Ge Superlattices under Hydrostatic Pressure

压力下Si/Ge超晶格热电材料的声子谱和群速度

Observation on surface morphology of Ge nano-films grown by ion beam sputtering

离子束溅射生长Ge纳米薄膜的表面形貌观察

Spin-Dephasing on Quantum Dot System with a Nearby Quantum Point Contact

量子点接触测量对量子点系统退相干的影响

The Study of Electrical Property Degradation of GaAs/Ge Solar Cells by Electron and Proton Co-Irradiation;

质子和电子共同辐照下GaAs/Ge太阳电池电性能退化研究

lowering of freezing point

冰点下降（测分子量用）

In(Ga)As Quantum-Dot Infrared Photodetectors

In(Ga)As量子点红外探测器

Study of InAs/GaAs Quantum Dots

InAs/GaAs系列量子点研究

Study of Energy and Electronic Properties in Semiconductor Quantum Dots;

导体量子点中电子能量和性质的研究

Atomistic Simulations of Elastic Moduli in GaN Quantum Dots

GaN量子点弹性模量的分子动力学模拟

The Decoherence of the Parabolic Linear Bound Potential Quantum Dot Charge Qubit

抛物势量子点电荷量子比特的消相干