基本释义:

异质结双极型晶体管

网络释义

1)HBT,异质结双极型晶体管

2)Heterojunction bipolar transistor,异质结双极型晶体管

3)HBT (heterojunction bipolar transistor),HBT(异质结双极型晶体管)

4)single-heterojunction bipolar transistor(SHBT),单异质结双极型晶体管

5)heterojunction bipolar transisters(HBT),异质结双极型晶体管(HBT)

6)double heterojunction bipolar transistor,双异质结双极晶体管

用法和例句

SiGe HBT Class AB Power Amplifier for Wireless Communications;

用于无线通信的SiGe异质结双极型晶体管AB类功率放大器(英文)

Frequency performance is the first key factor in the design of heterojunction bipolar transistor(HBT),fTand fmax are the main frequency parameters.

频率特性是异质结双极型晶体管(HBT)设计中应首先考虑的因素,而fT,fmax则是HBT最主要的频率性能指标。

An InP-based single-heterojunction bipolar transistor(SHBT)with base μ-bridge and emitter air-bridge is reported.

报道了具有基极微空气桥和发射极空气桥结构的InP单异质结双极型晶体管(SHBT)。

We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China.

报道了一种自对准InP/InGaAs双异质结双极晶体管的器件性能。

heterojunction bipolar transistor

异质结双极型晶体管

SiGe Heterojunction Bipolar Transistor (SiGe HBT) Research and Design;

SiGe异质结双极晶体管（SiGe HBT）研究与设计

Study on ESD of InGaP Heterojunction Bipolar Transistors

InGaP异质结双极晶体管ESD特性研究

A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

一种InP双异质结双极晶体管小信号物理模型及其提取方法

Status of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors Technology

InP/GaAsSb/InP双异质结双极晶体管技术发展现状(Ⅰ)

The DFM of Ultrahigh SiGe HBT;

超高频SiGe异质结双极晶体管的可制造性设计

Simulation, Design and Fabrication of GaAs-based Heterostructure Bipolar Transistor;

GaAs基异质结双极晶体管（HBT）的模拟、设计与制作

Experimental Research on Reliability of GeSi/Si Heterojunction Bipolar Transistors (HBTs);

GeSi/Si异质结双极晶体管（HBT）可靠性实验研究

The Study and Design of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs);

高频功率SiGe异质结双极晶体管（HBTs）的研究与设计

The Study of SiGe Heterojunction Bipolar Transistors and its Integrated Circuits;

SiGe异质结双极晶体管及其集成电路的研究

The Research of Base Dopant Outdiffusion and Setback Layers in SiGe Microwave Heterojunction Bipolar Transistor(HBT);

SiGe微波异质结双极晶体管中基区杂质外扩及阻挡层的研究

Experimental Research on Reliability of Si/SiGe/Si Heterojunction Bipolar Transistors (HBTs) under Thermal and Electrical Stress;

热电应力下Si/SiGe/Si异质结双极晶体管（HBTs）可靠性实验研究

double heterojunction laser diode

双异质结激光二极管

monorail double heterojunction diode

单轨双异质结二极管

The Convergence Characteristic of the Forward I-V Characteristic Curves of Emitter-base Junction of Bipolar Junction Transistor;

双极结型晶体管发射结正向I-V特性曲线的汇聚特性

Measuring methods for insulated-gate bipolar transistor

GB/T17007-1997绝缘栅双极型晶体管测试方法

Effects of Stress on Bipolar Transistor Performance Parameters

应力对双极型晶体管参数性能的影响

A Study of the Structure and the Performance of Microwave Silicon Bipolar Transistor Using for MMIC and Its Process Development

用于MMIC硅基双极型高频微波晶体管结构、性能研究及工艺开发