基本释义:

由碱可除光刻胶

网络释义

1)alkaline strippable resist,由碱可除光刻胶

2)photoresist stripping,光刻胶去除技术

3)discum,去除光刻胶底膜

4)photorisister dry strip,光刻胶干式剥除

5)variable threshold resist model,可变阈值光刻胶模型

6)photoresist

[,f?ut?uri'zist],光刻胶

用法和例句

Recently, more attention has been paid to a novel photoresist stripping technology based on atmospheric pressure plasma.

光刻胶去除技术在微电子工业中占有非常重要的地位,约占集成电路制造工艺的30-35%,去胶的好坏直接影响产品的成品率及器件和电路的制造成本。

A modified aerial image was obtained by convolving the aerial image with a Gaussian filter to smear the image in a manner analogous to resistive diffusion, and then applying a variable threshold resist model on the modified image to predict the CD (critical dimension) variations.

用高斯滤波器与空间影像进行卷积,得到改进的空间影像来模拟光刻胶的扩散,然后使用可变阈值光刻胶模型,以实际工艺数据拟合该模型参数,再把改进空间影像的相关信息作为输入,并根据可变阈值光刻胶模型所确定的光强阈值来预测CD(criticaldimension)变化,从而使光刻仿真的结果更精确地附合实际测量数据。

Progress in the Research of Chemical Amplified Photoresist;

化学放大光刻胶高分子材料研究进展

Research on thick photoresist mask electroplating process in micro-fabrication;

微加工厚光刻胶掩膜电镀工艺研究

Key technique of photoresist through-mask Electrochemical micromachining;

光刻胶掩膜微细电化学加工参数的试验研究

Atmospheric Pressure RF-Plasma System and Its Application in Photoresist Stripping;

常压射频冷等离子体系统及其在光刻胶去除技术中的应用

In microelectronics, the process of removing material, on a chip, left exposed by the exposure and development of the photoresist.

在微电子技术中,通过曝光并显影光刻胶除去芯片上的物质露出剩余部分的工艺。

Fundamentals and Lithographie Technology Based on Pulse Laser Exposing SU-8 Photoresist;

脉冲激光曝光SU-8胶的基础与光刻技术研究

Study on material removal theoretical model of zone polishing technology

环带抛光技术材料去除理论模型研究

Extraction Technology of Quenching Agent in Mineral Luminescent Materials and Spectral Property;

矿物发光原料中猝灭剂的去除技术与光谱特性

scaled down lithography

按比例缩小光刻技术

The Research on Nano-TiO_2 Photocatalytic Removal of Nitrogen Oxides;

纳米TiO_2光催化技术对氮氧化物去除的实验研究

The Study on Photocatalytic Technology for Surfactant Removal in Water;

光催化氧化技术去除水中表面活性剂的研究

Decomposition of Styrene Gas with Outer Combined Plasma Photolysis(OCPP) Technology

外置式联合等离子体光解技术去除苯乙烯气体

Study on the Improvement of Ashing Rate of Photoresist Ashing Process with CF4 Gas;

含氟气体的去光刻胶工艺灰化率提高的研究

Study on Key Technologies in UV-LED Fiber Lithography System

紫外LED光纤光刻系统关键技术研究

Removal of Humic Acid in Water with the Combination of TiO_2 Photocatalytic Oxidation and Microfiltration

TiO_2光催化和微滤结合技术对水中腐殖酸去除的研究

Improvement of Photo Resist Remove for the 11μm DRAM Deep Trench Capacitor Process

0.11μm DRAM技术中深沟壑底部光阻残余物去除工艺的改善研究

Study on Laser Interferometric Lithography Technology Based on Multi-beam Interference;

基于多光束相干的激光干涉光刻技术研究

In photography, the light sensitivity of film emulsion.

在摄影技术中,胶片感光乳剂的光敏度。

Investigation on Extreme Ultraviolet Lithography;

极紫外投影光刻中若干关键技术研究

Research on Electron Beam Nanolithogrpahy Based on AFM;

基于AFM的电子束纳米级光刻技术研究

Lithography Study of UV-LIGA Technology;

UV-LIGA技术光刻工艺的研究