基本释义:

硅单晶

网络释义

1)Single crystal silicon,硅单晶

2)Silicon single crystal,硅单晶

3)Si single crystal,硅单晶

4)Si crystal,硅单晶

5)silicon crystal,硅单晶

6)seed of single crystal silicon,单晶硅籽晶

用法和例句

Radiation effects and stability hardening of single crystal silicon on space solar cell;

空间太阳电池硅单晶的辐射效应及加固

Hydrogen on the surface of single crystal silicon has been introduced bycathodic charing.

利用阴极充氢法，向硅单晶表面注入氢离子，用化学浸蚀法观察晶体表面氢与层错间的相互作用层错，特别是Frank半位错在硅单晶表面的露头处是原子氢的择优聚集区，原子氢化合成分子氢后能诱发大的晶格畸变利用化学浸蚀法，观察到了氢与层错的相互作

The properties of potential barrier at the contact between a silicon single crystal with built-in phosponus and aluminium are studied using time domain differential dielectric spectroscopy.

用微分时域介电谱方法在液氮温度下研究了掺磷硅单晶和铝接触界面势垒层的性质。

A new method which can nondestructively measure, then estimate the capture cross sections of surface state σ o n and σ - p (or σ n + and σ p 0) of silicon single crystal is proposed.

此法基于变温光伏测量 ,采用 (111) p型硅单晶 (NA =1。

P-type conductive Si crystals were grown with resistivity of(3～5)×103 Ω·cm or(1～2)×104 Ω·cm.

介绍了高阻真空区熔硅单晶的研制工艺,研制出了导电类型为p型,电阻率(3～5)×103Ω。

With experiments of high resistance n〈111〉 Si crystal grouth ,we found that theseed rotation rate ,lift rate and thermal convection could affect the uniformity of radial resistivity inn〈111〉Silicon crystal .

通过不同工艺的拉晶实验,发现晶转、拉速、热对流等因素对高阻n〈111〉硅单晶径向电阻率均匀性有所影响。

The technical control of 300mm silicon crystal is discussed,and the effects of the technical parameters,heat shield and CUSP magnetic field on the crystal growth is analysed.

讨论了 30 0 mm硅单晶的工艺控制 ,分析了拉晶工艺、热屏及磁场对晶体质量的影响。

Selection of the Resistivity of Silion Monocvystalline of High-temperature Silion Power Devices;

高温硅功率器件所用硅单晶电阻率的选取

Study on the Release Rate of Latent Heat in Solar Grade Czochralski Silicon Growth;

太阳能硅单晶快速生长中结晶潜热的研究

The Czochralski silicon monocrystalline polished wafer with a diameter of eight inches

8英寸直拉硅单晶抛光片

Monocrystalline silicon ascut slices and lapped slices

GB/T12965-1996硅单晶切割片和研磨片

Investigation of Oxygen Precipitation and Internal Gettering in Czochralski Silicon;

直拉硅单晶的氧沉淀及内吸杂的研究

Investigation on Rapid Thermal Processing of Czochralski-grown (CZ) Silicon;

直拉硅单晶的快速热处理（RTP）研究

Technical Analysis of Harmonic Control Plan of Crystal Silicon Growth Furnace;

硅单晶生长炉谐波治理技术方案分析

Study on the Vacuum Growing Technology for High Resistivity FZ-Si Crystal

真空高阻区熔硅单晶生长技术的研究

Research of Nc-Si/c-Si Heterojunction MOSFETs Pressure-magnetic Mutli-sensor;

纳米硅/单晶硅异质结MOSFETs压/磁多功能传感器研究

Anisotropic Etching Simulation of Crystalline Silicon Based on Crystal Lattice

基于晶格结构的单晶硅异向腐蚀的计算机模拟

Oxidation Behaviors of Poly- and Single Crystalline Transition-Metal Disilicides;

过渡族金属二硅化物单晶和多晶的氧化

General specification of single silicon solar cells

GB/T12632-1990单晶硅太阳电池总规范

We made the Czochralski silicon single crystal with a diameter of 12 inches.

直径12英寸直拉单晶硅研制成功。

neutron transmutation doping of monocrystalline silicon

单晶硅中子嬗变掺杂技术

Application of Nitrogen-doped Czochralski Silicon in Solar Cell;

掺氮直拉单晶硅在太阳电池中的应用

A Simulant Experiment Study of the Silicon s Mechanism in the CMP;

单晶硅片CMP磨损机理的模拟试验研究

The Effect of High-Energy Particles Irradiation in Monocrystalline Silicon

高能粒子辐照单晶硅辐照效应的研究

Matlab-Simulating of the Transmitted Lauegrams of Monocrystalline Silicon

单晶硅透射劳厄相图的Matlab模拟