基本释义:

高纯三甲基镓

网络释义

1)high-purity trimethylgallium,高纯三甲基镓

2)high-purity triethylgallium,高纯三乙基镓

3)high-purity triisobutylgallium,高纯三异丁基镓

4)trimethylgallium,三甲基镓

5)high-purity trimethylphosphorus,高纯三甲基磷

6)high-purity trimethylaluminum,高纯三甲基铝

用法和例句

The present with trimethylgallium(TMG), triethylindium(TEI) and AsH3(100%), PH3 (100) as group Ⅲ and group Ⅴ sources respectively the In1-xGaxAs/InP multiquantum trap structure matetsals, were grown by organometallic vapor epitaxy (MOVPE) technique at a low temperature and low pressure.

本文报导了在低温、低压下,以三甲基镓(TMG)、三乙基铟(TEI)为Ⅲ族源材料,100％砷烷(AsH_3)、100％磷烷(PH_3)为V族源材料,用金属有机化合物气相沉积技术在(100)InP衬底上生长出In_(1-x)Ga_xAs/InP多量子阱结构材料。